Description

The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.

Features

・ Single 3.0 V supply: 2.7 V to 3.6 V
・ Fast access time: 45/55 ns (max)
・ Power dissipation:
 Active: 9 mW/MHz (typ)
 Standby: 1.5 μW (typ)
・ Completely static memory.
 No clock or timing strobe required
・ Equal access and cycle times
・ Common data input and output.
 Three state output
・ Battery backup operation.
 2 chip selection for battery backup
・ Temperature range: −40 to +85°C