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2SK1808

品牌：瑞萨（Renesas）

产品：MOSFET

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2SK1808

Silicon N-Channel MOS FET

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Application

High speed power switching

Features

Low on-resistance
High speed switching
Low drive curren
No secondary breakdown
Suitable for switchingregulator, DC-DC converter

Outline

Absolute Maximum Ratings

Item Symbol Ratings Unit

Drain to source voltage VDSS 900 V

Gate to source voltage VGSS ±30 V

Drain current ID 4 A

Drain peak current ID(pulse)*1 10 A

Body to drain diode reverse drain current 　 IDR 4 A

Channel dissipation Pch*2 35 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes 1. PW 10 μs, duty cycle 1 %
2. Value at Tc = 25 °C

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Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	900	V
Gate to source voltage	VGSS	±30	V
Drain current	ID	4	A
Drain peak current	ID(pulse)*1	10	A
Body to drain diode reverse drain current	IDR	4	A
Channel dissipation	Pch*2	35	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C