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2SK1626/2SK1627

产品:MOSFET
在线阅读:2SK1627.pdf

2SK1626, 2SK1627


Silicon N-Channel MOS FET

产品详情

Application

 

High speed power switching

 

Features

 

  •   Low on-resistance
  •   High speed switching
  •   Low drive current
  •   No secondary breakdown
  •   Suitable for switching regulator and DC-DC converter

 

 

Outline

 

 

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage 2SK1626 VDSS 450 V
2SK1627 500
Gate to source voltage VGSS ±30 V
Drain current ID 5 A
Drain peak current ID(pulse)*1 20 A
Body to drain diode reverse drain current   IDR 5 A
Channel dissipation Pch*2 35 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

 

Note 1. PW 10 μs, duty cycle 1%
          2. Value at TC = 25°C

 

 

 

 

 

 

 

相关产品

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