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1N4148

品牌：瑞萨（Renesas）

产品：整流二极管

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1N4148

Silicon Epitaxial Planar Diode for Various Detector,
Modulator, Demodulator

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Features

Low capacitance. (C = 4.0 pF max)
Short reverse recovery time. (trr = 4.0 ns max)
High reliability with glass seal

Ordering Information

Type No.	Cathode band	Mark	Package Code
1N4148	Black	H48	DO-35

Pin Arrangement

Absolute Maximum Ratings (Ta = 25°C)

Item
Symbol

Value

Unit

peak reverse voltage

VRM

100

V

Reverse voltage

VR

75

V

Peak forward current

IFM

450

mA

Non-Repetitive peak forward surge current

IFSM *

1

A

Average forward current

IO

150

mA

Power dissipation

Pd

500

mW

Junction temperature

Tj

200

°C

Storage temperature

Tstg

–65 to +200

°C

Note: Within 1s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test Condition
Forward voltage	VF	—	—	1	V	IF = 10 mA
Reverse current	IR	—	—	25	nA	VR = 20 V
Capacitance	C	—	—	4.0	pF	VR = 0 V, f = 1 MHz
Reverse recovery time	trr *	—	—	4.0	ns	IF = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 Ω

Note: Reverse recovery time test circuit

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Item	Symbol	Value	Unit
peak reverse voltage	VRM	100	V
Reverse voltage	VR	75	V
Peak forward current	IFM	450	mA
Non-Repetitive peak forward surge current	IFSM *	1	A
Average forward current	IO	150	mA
Power dissipation	Pd	500	mW
Junction temperature	Tj	200	°C
Storage temperature	Tstg	–65 to +200	°C