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RJH1CF4RDPQ-80
品牌：瑞萨（Renesas）
产品：IGBT
在线阅读：RJH1CF4RDP.pdf
RJH1CF4RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Silicon N Channel IGBT
High Speed Power Switching
产品详情
Features
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25°C)
Gate to emitter voltage rating ±30 V
Pb-free lead plating
浙公网安备 33010502000757号