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Silicon N Channel MOSFET High Speed Power Switching
Features:
Low on-resistance
Low drive current
High density mounting
Absolute Maximum Ratings
Vdss:450V
Vgss：±30V
ID：0.7A
ID（pulsee):2.1A
IDR:0.7A
Pch:2W
Tch:150℃
Tstg:-55to+150℃
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