Description

The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII

Features

・ Single 5.0 V supply: 5.0 V ± 10%
・ Access time: 12 ns (max)
・ Completely static memory
 No clock or timing strobe required
・ Equal access and cycle times
・ Directly TTL compatible
 All inputs and outputs
・ Operating current: 160 mA (max)
・ TTL standby current: 40 mA (max)
・ CMOS standby current : 5 mA (max)
                        : 1.0 mA (max) (L-version)
・ Data retention current: 0.5 mA (max) (L-version)
・ Data retention voltage: 2 V (min) (L-version)
・ Center VCC and VSS type pin out